MR25H10CDC

11

Copyright © Everspin Technologies 2013

MR25H10 Rev. 9, 4/2013

MR25H10

Symbol Parameter

Grade

Min

Max

Unit

V

DD

Powersupplyvoltage

Industrial

2.7

3.6

V

AEC-Q100Grade1

3.0

3.6

V

V

IH

Inputhighvoltage

All

2.2

V

DD

+0.3

V

V

IL

Inputlowvoltage

All

-0.5

0.8

V

T

A

Temperatureunderbias

Industrial

-40

85

°C

AEC-Q100Grade1

1

-40

125

°C

1

AEC-Q100Grade1temperatureprofileassumes10percentdutycycleatmaximumtemperature(2years

outof20-yearlife.)

Table 3.2 Operating Conditions

ELECTRICAL SPECIFICATIONS

Symbol Parameter

Conditions

Min

Typical

Max

Unit

I

LI

Inputleakagecurrent

-

-

±1

μA

I

LO

Outputleakagecurrent

-

-

±1

μA

V

OL

Outputlowvoltage

I

OL

=+4mA

-

-

0.4

V

I

OL

=+100μA

-

-

V

SS

+0.2v

V

V

OH

Outputhighvoltage

(I

OH

=-4mA)

2.4

-

-

V

(I

OH

=-100μA)

V

DD

-0.2

-

-

V

Table 3.3 DC Characteristics

Table 3.4 Power Supply Characteristics

Symbol Parameter

Conditions

Typical

Max

Unit

I

DDR

ActiveReadCurrent

1MHz

2.5

3

mA

40MHz

6

10

mA

I

DDW

ActiveWriteCurrent

1MHz

8

13

mA

40MHz

23

27

mA

I

SB

StandbyCurrent

CShighandSPIbusinactive

90

115

μA

I

zz

StandbySleepModeCurrent

CShighandSPIbusinactive

7

30

μA

MR25H10CDC Datasheet Related Products:
MR25H10CDC Information:
Part No.
MR25H10CDC
Description
IC MRAM 1MBIT 40MHZ 8DFN
File Size
1965258 bytes
Page Size
612 x 792 pts (letter)
All Pages
20
Manufacturer
EverSpin Technologies, Inc.
Homepage
http://everspin.com/
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