RW1C025ZPT2CR

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Data Sheet

RW1C025ZP

 

 Electrical characteristics (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

I

GSS

-

-

10

A V

GS

=

10V, V

DS

=0V

Drain-source breakdown voltage V

(BR)DSS

20

-

-

V

I

D

=

1mA, V

GS

=0V

Zero gate voltage drain current

I

DSS

-

-

1

A V

DS

=

20V, V

GS

=0V

Gate threshold voltage

V

GS (th)

0.3

-

1.0

V

V

DS

=

10V, I

D

=

1mA

-

48

65

I

D

=

2.5A, V

GS

=

4.5V

-

65

90

I

D

=

1.2A, V

GS

=

2.5V

-

90

135

I

D

=

1.2A, V

GS

=

1.8V

-

120

240

I

D

=

0.5A, V

GS

=

1.5V

Forward transfer admittance

l Y

fs

 l

2.2

-

-

S

I

D

=

2.5A, V

DS

=

10V

Input capacitance

C

iss

-

1300

-

pF

V

DS

=

10V

Output capacitance

C

oss

-

90

-

pF

V

GS

=0V

Reverse transfer capacitance

C

rss

-

70

-

pF

f=1MHz

Turn-on delay time

t

d(on)

-

9

-

ns

I

D

=

1.2A, V

DD

   

10V

Rise time

t

r

-

18

-

ns

V

GS

=

4.5V

Turn-off delay time

t

d(off)

-

110

-

ns

R

L

=8.3

Fall time

t

f

-

50

-

ns

R

G

=10

Total gate charge

Q

g

-

21

-

nC

I

D

=

2.5A

Gate-source charge

Q

gs

-

4

-

nC

V

DD

  

10V

Gate-drain charge

Q

gd

-

3

-

nC

V

GS

=

4.5V

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

V

SD

-

-

1.2

V

I

s

=

2.5A, V

GS

=0V

*Pulsed

Conditions

Conditions

m

Parameter

Parameter

Static drain-source on-state
resistance

R

DS (on)

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

********

*

*

*

2/6

 2011.05 -  Rev.A

RW1C025ZPT2CR Datasheet Related Products:
RW1C025ZPT2CR Information:
Part No.
RW1C025ZPT2CR
Description
MOSFET P-CH 20V 2.5A WEMT6
File Size
591594 bytes
Page Size
595.22 x 842 pts (A4)
All Pages
7
Manufacturer
ROHM Semiconductor
Homepage
http://www.rohm.com/
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