RW1C025ZPT2CR

 

Data Sheet

www.rohm.com
© 2011  ROHM Co., Ltd. All rights reserved.

1.5V Drive Pch MOSFET

   RW1C025ZP

 Structure

 Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low On-resistance.

2) Small high power package.

3) Low voltage drive.(1.5V)

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

Code

T2CR

Basic ordering unit (pieces)

8000

RW1C025ZP

 Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

V

DSS

20

V

Gate-source voltage

V

GSS

10

V

Continuous

I

D

2.5

A

Pulsed

I

DP

10

A

Continuous

I

S

0.5

A

Pulsed

I

SP

10

A

Power dissipation

P

D

0.7

W

Channel temperature

Tch

150

C

Range of storage temperature

Tstg

55 to 150

C

*1 Pw

10s, Duty cycle1%

*2 Mounted on a ceramic board.

 Thermal resistance

Symbol

Limits

Unit

Channel to Ambient

Rth (ch-a)

179

C / W

*Mounted on a ceramic board.

Parameter

Type

Source current
(Body Diode)

Drain current

Parameter

WEMT6

(6)

(5)

(4)

(1)

(2)

(3)

*

*2

*1

*1

*2

*1

Abbreviated symbol : ZG

(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain

∗1

(4)

(1)

(2)

∗2

(6)

(5)

(3)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

1/6

 2011.05 -  Rev.A

RW1C025ZPT2CR Datasheet Related Products:
RW1C025ZPT2CR Information:
Part No.
RW1C025ZPT2CR
Description
MOSFET P-CH 20V 2.5A WEMT6
File Size
591594 bytes
Page Size
595.22 x 842 pts (A4)
All Pages
7
Manufacturer
ROHM Semiconductor
Homepage
http://www.rohm.com/
Logo